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| T R I Q U I N T S E M I C ON D U C TO R, I N C. TGL6425-SCC Digital Attenuator q q q q q q PHOTO ENLARGEMENT 0.5 to 18-GHz Frequency Range 5- Bit Step Attenuator 15.5-dB Attenuation Range 4-dB Typical Inser tion Loss 1.6:1 Input/Output SWR 6425 2,1844 x 1,8288 x 0,1016 mm (0.086 x 0.072 x 0.004 in.) DESCRIPTION The TriQuint TGL6425-SCC is a GaAs MMIC 5- bit FET attenuator which operates fr om 0.5 to 18-GHz. The attenuation step is 0.5- dB and is controlled by 10 input lines. Control bias voltages are 0 V and -5 V. The input and output return loss is typically 13 - dB. This unique absorptive design combines both "T"and "PI"configurations to produce an extremely small size and low inser tion loss attenuator. The small size and reliability advantage of a monolithic attenuator over a hybrid design make this device attractive for use in electronic war fare, radar, telecommunication, and navigation systems for level set, modulation and switching functions. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment method as well as the thermocompression and thermosonic wire bonding processes. Ground is provided to the circuitry through vias to the backside metallization. TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com TGL6425-SCC TYPICAL ATTENUATION 0 TA = 25C -5 Attenuation (dB) -10 Attenuation State: -15 0 dB 2 dB 4 dB 8 dB 15.5 dB -20 -25 0 2 4 6 8 10 12 14 16 18 Frequency (GHz ) TYPICAL INPUT POWER 35 30 TA = 25C P1dB Input Power (dBm) 25 20 15 Attenuation State: 0 dB 2 dB 4 dB 10 5 0 0 3 6 9 12 15 18 8 dB 15.5 dB Frequency (GHz ) TYPICAL INPUT RETURN LOSS Input Return Loss (dB) 7 T = 25C 13 19 25 31 Attenuation State: 37 43 0 3 6 9 12 15 18 0 dB 2 dB 4 dB 8 dB 15.5 dB Frequency (GHz ) TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 2 TGL6425-SCC TYPICAL OUTPUT RETURN LOSS Output Return Loss (dB) 0 TA = 25C 6 12 18 Attenuation State: 24 30 0dB 2dB 4dB 8dB 15.5dB 36 0 3 6 9 12 15 18 Frequency (GHz ) ABSOLUTE MAXIMUM RATINGS Input continuous wave power , PIN .......................................................................................................... 1 W Contr ol voltage range, V1, V2, V3, V4, V5, V6, V7, V8, V9, V10 ................................................ -10 V to 0 V Operating channel temperature, TCH ................................................................................................ 150 C * Mounting temperature (30 sec), TM ................................................................................................... 320C . Storage temperature range, TSTG ............................................................................................ -65 to 150 C Ratings over operating channel temperature range, TCH (unless otherwise noted) Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are str ess ratings only and functional operation of the device at these or any other conditions beyond those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for extended periods may af fect device reliability. *Operating channel temperature, TCH, will directly affect the device MTTF . For maximum life, it is recommended that channel temperature be maintained at the lowest possible level. RF CHARACTERISTICS PARAMETER TEST CONDITIONS TYPICAL UNIT SWR(in) P1dB(in) Attenuation Input standing wave ratio Input power at 1- dB gain compression see next table f = 2 - 18 GHz (all states) f = 2 - 18 GHz (all states) T A = 25C dB dBm 1.6:1 1.4:1 see next table SWR(out) Output standing wave ratio TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 3 TGL6425-SCC RF CHARACTERISTICS ATTENUATION STATE (dB) TYPICAL ATTENUATION at 9 GHz (dB) TYPICAL VARIANCE at 9 GHz (dB) TYPICAL INPUT POWER 1-dB Gain Compression at 2-18 GHz (dBm) 0 0.5 1 2 4 8 15.5 3.6 4.1 4.4 5.7 7.6 12.1 19.7 0.25 0.25 0.25 0.25 0.25 0.45 0.7 28 28 29 29 29 20 20 BIAS TRUTH TABLE ATTEN STATE (dB) V1 V2 V3 V4 V5 V6 V7 V8 V9 V10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 0 0 0 0 0 0 0 0 -5 -5 -5 -5 -5 -5 -5 -5 0 0 0 0 0 0 0 0 -5 -5 -5 -5 0 0 0 0 -5 -5 -5 -5 0 0 0 0 -5 -5 -5 -5 0 0 0 0 -5 -5 -5 -5 0 0 0 0 -5 -5 0 0 -5 -5 0 0 -5 -5 0 0 -5 -5 0 0 -5 -5 0 0 -5 -5 0 0 -5 -5 0 0 -5 -5 0 0 0 0 0 0 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 0 0 0 0 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 0 0 -5 -5 0 0 0 0 -5 -5 -5 -5 -5 -5 -5 -5 0 0 -5 -5 0 0 0 0 -5 -5 -5 -5 -5 -5 -5 -5 0 0 -5 -5 0 0 -5 -5 0 0 0 0 -5 -5 -5 -5 0 0 -5 -5 0 0 -5 -5 0 0 0 0 -5 -5 -5 -5 0 0 0 0 -5 -5 -5 -5 0 0 -5 -5 0 0 -5 -5 0 0 0 0 -5 -5 -5 -5 0 0 -5 -5 0 0 -5 -5 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 -5 0 TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 4 TGL6425-SCC EQUIVALENT SCHEMATIC 2 - 186m m 2 - 70m m 2 - 290m m RF INPUT 2 - 32m m m 2 - 62m m 2 - 16m 2 - 32m m 2 - 16m m 2 - 62m m RF OUTPUT 2 - 50m m 100m m 2 - 55m m 2 - 30m m V1 V2 V3 V4 V5 V6 V7 V8 V9 V10 BIAS NETWORK V1 V3 V2 V5 V 10 2 3 4 5 6 1 RF Input TGL6425 7 RF Output 12 11 10 9 8 V9 V8 V6 V7 V4 All bias r esistors have a nominal value of 25 - Ohms. RF connections: Bond using two 1-mil diameter , 20 to 25-mil- length gold bond wires at both RF Input and RF Output for optimum RF per formance. DC blocks are not provided at RF ports. Close placement of external components is essential to resonant-free performance. 5 TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com TGL6425-SCC 1,8288 (0.0720) 1,6358 (0.0644) 1,3970 (0.055) MECHANICAL DRAWING 2 3 4 5 6 1,0592 (0.0417) 2,0396 (0.0803) 1 7 1,0592 (0.0417) 0,1880 (0.0074) 12 11 10 9 8 0.0 0,5029 (0.0198) 0,8077 (0.0318) 1,1049 (0.0435) 1,3691 (0.0539) 1,7145 (0.0675) 2,1844 (0.0860) 0.0 Units: Millimeters (inches) Thickness: 0,102 (0.004) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad. Chip size 0,0508 (0.002) Bond pad #1 (RF In): 0,127 x 0,207 (0.0050 x 0.0082) Bond pad #2 (V1): Bond pad #3 (V3): Bond pad #4 (V2): Bond pad #5 (V5): Bond pad #6 (V10): 0,120 x 0,120 (0.0047 x 0.0047) 0,120 x 0,120 (0.0047 x 0.0047) 0,120 x 0,120 (0.0047 x 0.0047) 0,120 x 0,120 (0.0047 x 0.0047) 0,120 x 0,120 (0.0047 x 0.0047) Bond pad #7 (RF Out): 0,246 x 0,119 (0.0097 x 0.0047) Bond pad #8 (V4): Bond pad #9 (V7): 0,120 x 0,120 (0.0047 x 0.0047) 0,120 x 0,120 (0.0047 x 0.0047) Bond pad 1#0 (V6): 0,120 x 0,120 (0.0047 x 0.0047) Bond pad #11 (V8): 0,120 x 0,120 (0.0047 x 0.0047) Bond pad #12 (V9): 0,120 x 0,120 (0.0047 x 0.0047) 6 TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com Application Notes: Suggested Driver Cir cuit TGL6425-SCC OVERVIEW The following is a suggested driver circuit for the TriQuint TGL6425-SSC 0.5 to 18 - Ghz step attenuator. The circuit allows the user to use a digital binary input to achieve the desir ed level of attenuation; with a digital wor d of "00000" equaling0 -dB relative attenuation and "11111" equaling 15.5- dB relative attenuation. The JFET s (2N5116 or equivalent) provide the r equired level shift from TTL voltages to attenuation control levels. The 2 - input NOR gates should be CMOS (74C02 or equivalent) with 0 V applied to the positive supply terminal and -5 V on the negative supply terminal. DRIVER CIRCUIT SCHEMATIC ~ 5kOhms TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 7 |
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